IGOT65R025D2

GaN transistor, 650V, 61A/120A, 30mΩ

Manufacturer partno	IGOT65R025D2AUMA1
RoHS	yes
Manufacturer	INFINEON TECHNOLOGIES
Case	PG-DSO-20-91
Type of transistor	GaN FET
Operating temperature	-55...150°C
Drain-source voltage	650V
Drain current	61A
On-state resistance	30mΩ
Gate charge	11nC
Pulsed drain current	120A

Extended distributor/manufacturer information (EU Regulation 2023/988)

Trade name: HESTORE Hungary Ltd
Postal address: Cziraki street 26-32, Budapest, H1163
Electronic address: https://www.hestore.hu/

Part.No: 100.487.43

Add to favorites

Quantity (pcs):

Unit price excl. VAT

1+	5 364 Ft
5+	4 984 Ft
10+	4 879 Ft
20+	4 784 Ft
50+	4 651 Ft

* The prices according to your settings are displayed without VAT, that contains your custom discount if available, without shipping costs. For modify please click

icon on top menu.

Availability	Qu.
3 workdays	> 1000

Any questions?

Also purchased by customers

The following products were ordered by other customers together with the above-mentioned model. Please check the compatibility of the selected products.