IRF630

FET N 9A/200V

RoHS	yes
Manufacturer	Infineon (IRF)
Case	TO220, TO220AB
Power	82W
Mounting	THT
Type of transistor	N-MOSFET, HEXFET
Polarisation	unipolar
Technology	HEXFET®
Drain-source voltage	200V
Drain current	9.5A
On-state resistance	300mΩ
Gate-source voltage	20V, ±20V
Junction-to-case thermal resistance	1.83K/W
Gate charge	23.3nC
Kind of package	tube
Teljesítmény elosztás	82W

Extended distributor/manufacturer information (EU Regulation 2023/988)

Trade name: HESTORE Hungary Ltd
Postal address: Cziraki street 26-32, Budapest, H1163
Electronic address: https://www.hestore.hu/

Part.No: 100.210.27

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Quantity (pcs):

Unit price excl. VAT

1+	287 Ft
10+	180 Ft
50+	161 Ft
100+	157 Ft
200+	153 Ft

* The prices according to your settings are displayed without VAT, that contains your custom discount if available, without shipping costs. For modify please click

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Availability	Qu.
In stock	> 25
3 workdays	> 10

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