IRF7342

P-MOSFET 55V 3,4A 2W Rds=0.105

RoHS	yes
Manufacturer	Infineon (IRF)
Case	SO8
Power	2W
Mounting	SMD
Type of transistor	HEXFET, P-MOSFET x2
Polarisation	unipolar
Technology	HEXFET®
Drain-source voltage	-55V
Drain current	-3.4A
On-state resistance	105mΩ
Gate-source voltage	20V, ±20V
Gate charge	26nC
Junction-to-ambient thermal resistance	62.5K/W
Teljesítmény elosztás	2W

Extended distributor/manufacturer information (EU Regulation 2023/988)

Trade name: HESTORE Hungary Ltd
Postal address: Cziraki street 26-32, Budapest, H1163
Electronic address: https://www.hestore.hu/

Part.No: 100.299.48

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Quantity (pcs):

Unit price excl. VAT

1+	434 Ft
5+	272 Ft
10+	248 Ft
20+	235 Ft
50+	223 Ft

* The prices according to your settings are displayed without VAT, that contains your custom discount if available, without shipping costs. For modify please click

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Availability	Qu.
In stock	> 1
3 workdays	> 75

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