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FDC6561AN

Dual N-Channel Logic Level PowerTrench MOSFET
FDC6561AN / Dual N-Channel Logic Level PowerTrench MOSFET (FDC6561AN / ONSEMI)
Manufacturer partno FDC6561AN
RoHS yes
Manufacturer ONSEMI
Case SSOT-6,
SuperSOT-6
Mounting SMD
Kind of package reel,
tape
Type of transistor N-MOSFET x2
Polarisation unipolar
Technology PowerTrench®
Drain-source voltage 30V
Drain current 2.5A
On-state resistance 152mΩ
Gate-source voltage ±20V
Gate charge 3.2nC
Power dissipation 0.96W
Kind of channel enhanced
Extended distributor/manufacturer information (EU Regulation 2023/988)

Trade name: HESTORE Hungary Ltd
Postal address: Cziraki street 26-32, Budapest, H1163
Electronic address: https://www.hestore.hu/

Part.No: 100.293.04
Quantity (pcs):

Unit price excl. VAT
1+ 269 Ft
5+ 168 Ft
10+ 145 Ft
20+ 132 Ft
50+ 123 Ft
* The prices according to your settings are displayed without VAT, that contains your custom discount if available, without shipping costs. For modify please click icon on top menu.

Availability Qu.
In stock > 25
3 workdays > 100000
10-15 workdays > 500

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