
| RoHS | yes |
|---|---|
| Manufacturer | Infineon (IRF) |
| Case | SO8 |
| Power | 2W |
| Mounting | SMD |
| Type of transistor | HEXFET, N/P-MOSFET x2, N/P-MOSFET |
| Polarisation | unipolar |
| Technology | HEXFET® |
| Drain-source voltage | 20/-20V |
| Drain current | 6.6/-5.3A |
| On-state resistance | 29/58mΩ |
| Gate-source voltage | 12V, ±12V |
| Gate charge | 18/19nC |
| Junction-to-ambient thermal resistance | 62.5K/W |
| Teljesítmény elosztás | 2W |
Trade name: HESTORE Hungary Ltd
Postal address: Cziraki street 26-32, Budapest, H1163
Electronic address: https://www.hestore.hu/
| 1+ | 405 Ft |
|---|---|
| 5+ | 253 Ft |
| 10+ | 230 Ft |
| 20+ | 217 Ft |
| 50+ | 205 Ft |
icon on top menu. | Availability | Qu. |
|---|---|
| 3 workdays | > 4000 |
The products in your cart will be delivered from the HESTORE warehouse in Hungary.