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DG50X12T2

Transistor, IGBT, integrated anti parallel diode, 1200V, 50A, 592W, TO247PLUS
DG50X12T2 / Transistor, IGBT, integrated anti parallel diode, 1200V, 50A, 592W, TO247PLUS (DG50X12T2 / STARPOWER SEMICONDUCTOR LTD.)
Manufacturer partno DG50X12T2
RoHS yes
Manufacturer STARPOWER SEMICONDUCTOR LTD.
Case TO247PLUS
Mounting THT
Kind of package tube
Type of transistor IGBT
Collector-emitter voltage 1200V
Collector current 50A
Turn-on time 180ns
Turn-off time 607ns
Features of semiconductor devices integrated anti-parallel diode
Gate-emitter voltage ±20V
Pulsed collector current 150A
Gate charge 0.35µC
Power dissipation 592W
Extended distributor/manufacturer information (EU Regulation 2023/988)

Trade name: HESTORE Hungary Ltd
Postal address: Cziraki street 26-32, Budapest, H1163
Electronic address: https://www.hestore.hu/

Part.No: 100.450.18
Quantity (pcs):

Unit price excl. VAT
1+ 2 981 Ft
5+ 2 700 Ft
10+ 2 633 Ft
20+ 2 577 Ft
50+ 2 503 Ft
* The prices according to your settings are displayed without VAT, that contains your custom discount if available, without shipping costs. For modify please click icon on top menu.

Availability Qu.
In stock > 3
3 workdays > 25

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