IRFU120N

Transistor, N-MOSFET, HEXFET, 100V, 9.1A, 210mΩ, unipolar, TO251AA, IPAK

RoHS	yes
Manufacturer	Infineon (IRF)
Case	TO251AA, IPAK
Power	39W
Mounting	THT
Type of transistor	N-MOSFET, HEXFET
Polarisation	unipolar
Technology	HEXFET®
Drain-source voltage	100V
Drain current	9.1A
On-state resistance	210mΩ
Gate-source voltage	20V, ±20V
Junction-to-case thermal resistance	3.2K/W
Gate charge	16.7nC
Teljesítmény elosztás	39W

Extended distributor/manufacturer information (EU Regulation 2023/988)

Trade name: HESTORE Hungary Ltd
Postal address: Cziraki street 26-32, Budapest, H1163
Electronic address: https://www.hestore.hu/

Part.No: 100.209.68

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Quantity (pcs):

Unit price excl. VAT

1+	418 Ft
5+	261 Ft
10+	238 Ft
20+	224 Ft
50+	213 Ft

* The prices according to your settings are displayed without VAT, that contains your custom discount if available, without shipping costs. For modify please click

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Availability	Qu.
In stock	> 10
3 workdays	> 3000

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