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IRF7306
Transistor, P-MOSFET x2, HEXFET, -30V, -3.6A, 100mΩ, unipolar, SO8
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
| Manufacturer partno | IRF7306PBF |
|---|---|
| RoHS | yes |
| Manufacturer | Infineon (IRF) |
| Case | SO8 |
| Power | 2W |
| Mounting | SMD |
| Type of transistor | HEXFET, P-MOSFET x2 |
| Polarisation | unipolar |
| Technology | HEXFET® |
| Drain-source voltage | -30V |
| Drain current | -3.6A |
| On-state resistance | 100mΩ |
| Gate-source voltage | 20V, ±20V |
| Gate charge | 16.7nC |
| Junction-to-ambient thermal resistance | 62.5K/W |
| Teljesítmény elosztás | 2W |
Extended distributor/manufacturer information (EU Regulation 2023/988)
Trade name: HESTORE Hungary Ltd
Postal address: Cziraki street 26-32, Budapest, H1163
Electronic address: https://www.hestore.hu/
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